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US Patent 11908680 Substrate processing method and substrate processing apparatus

Patent 11908680 was granted and assigned to Tokyo Electron on February, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Tokyo Electron
Tokyo Electron
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Current Assignee
Tokyo Electron
Tokyo Electron
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119086800
Patent Inventor Names
Daisuke Saiki0
Akira Fujita0
Hiroki Aso0
Kyosei Goto0
Date of Patent
February 20, 2024
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Patent Application Number
176448430
Date Filed
December 17, 2021
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Patent Citations
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US Patent 11062899 Coated film removing apparatus
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US Patent 7780867 Edge bevel removal of copper from silicon wafers
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US Patent 10490424 Substrate processing apparatus, substrate processing method, and storage medium
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US Patent 10651029 Substrate processing apparatus and substrate processing method
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US Patent 11062904 Method of forming polysilicon film and film forming apparatus
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Patent Primary Examiner
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Duy-Vu N Deo
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CPC Code
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H01L 21/6708
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H01L 21/67253
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H01L 21/67034
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H01L 21/6838
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H01L 21/68792
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H01L 21/02071
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H01L 21/67028
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H01L 21/67109
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Patent abstract

A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

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