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US Patent 11874480 Plasmonic lithography for patterning high aspect-ratio nanostructures
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Is a
Patent
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Date Filed
December 20, 2018
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Date of Patent
January 16, 2024
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Patent Application Number
16956334
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Patent Citations
US Patent 10795168 Transmissive metasurface lens integration
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US Patent 9069244 Mask for near-field lithography and fabrication the same
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US Patent 8995055 Angular and spectral selective absorber in ultrathin metamaterials
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Patent Inventor Names
Xi Chen
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Lingjie Jay Guo
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11874480
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Patent Primary Examiner
Jonathan Y Jung
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CPC Code
G02B 26/06
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G02B 1/005
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G02F 1/292
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G02F 2202/30
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G02B 1/007
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G02B 1/002
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G02B 5/008
0
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