US Patent 11874480 Plasmonic lithography for patterning high aspect-ratio nanostructures
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US Patent 11874480 Plasmonic lithography for patterning high aspect-ratio nanostructures
Article
Patent abstract
A plasmonic device incorporating a special hyperbolic metamaterial (HMM) metamaterial is used for plasmonic lithography, including ultraviolet (UV) lithography. It may be a Type II HMM (ϵ
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Patent Inventor Names
Lingjie Jay Guo0
Xi Chen0
Date of Patent
January 16, 2024
0Patent Application Number
169563340
Date Filed
December 20, 2018
0Patent Citations
Patent Primary Examiner
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