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US Patent 11871567 Three-dimensional memory devices and fabricating methods thereof

Overview Structured Data Issues Contributors

Is a

1

Date Filed

March 25, 2021

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Date of Patent

January 9, 2024

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Patent Application Number

17212754

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Patent Citations

US Patent 9899401 Non-volatile memory devices including vertical NAND channels and methods of forming the same

1

US Patent 11024641 Three-dimensional memory devices and fabricating methods thereof

1

US Patent 8072018 Semiconductor device and method for fabricating the same

1

US Patent 8470671 Method of manufacturing a 3-D vertical memory

1

US Patent 8552489 Vertical channel memory devices with nonuniform gate electrodes

1

US Patent 8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow

1

US Patent 8821752 Etching composition and method for fabricating semiconductor device using the same

1

US Patent 9230974 Methods of selective removal of blocking dielectric in NAND memory strings

1

US Patent 9230982 Protective structure to prevent short circuits in a three-dimensional memory device

1

US Patent 9397111 Select gate transistor with single crystal silicon for three-dimensional memory

1

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Patent Inventor Names

Kun Zhang

1

Patent Jurisdiction

United States Patent and Trademark Office

1

Patent Number

1

Patent Primary Examiner

1

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