Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Jinn Tsai0
Wei-Su Chen0
Date of Patent
December 6, 2011
Patent Application Number
11966726
Date Filed
December 28, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The lamination structure comprises a plurality of conductive layers arranged from bottom to top and separated from each other, and each of the conductive layers has a channel region and an adjacent source/drain doped region along the first direction. A first gate structure is on a sidewall of the channel region of each conductive layer. The first gate structure comprises an inner first gate insulating layer and an outer first gate conductive layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
