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US Patent 11869893 Stacked field effect transistor with wrap-around contacts

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
October 27, 2021
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Date of Patent
January 9, 2024
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Patent Application Number
17511647
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Patent Citations
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US Patent 9773913 Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance
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US Patent 9847390 Self-aligned wrap-around contacts for nanosheet devices
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US Patent 10074727 Low resistivity wrap-around contacts
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US Patent 10084094 Wrapped source/drain contacts with enhanced area
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US Patent 10192867 Complementary FETs with wrap around contacts and method of forming same
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US Patent 10192819 Integrated circuit structure incorporating stacked field effect transistors
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US Patent 10236218 Methods, apparatus and system for forming wrap-around contact with dual silicide
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US Patent 7054136 Controlled ESR low inductance multilayer ceramic capacitor
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US Patent 8115093 Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
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Patent Inventor Names
Alexander Reznicek
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Chun-Chen Yeh
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Ruilong Xie
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Dechao Guo
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11869893
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Patent Primary Examiner
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Joseph C. Nicely
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