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US Patent 11855151 Multi-gate device and method of fabrication thereof

Patent 11855151 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
June 21, 2021
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Date of Patent
December 26, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17353155
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Patent Citations
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US Patent 8415718 Method of forming epi film in substrate trench
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US Patent 8497177 Method of making a FinFET device
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US Patent 8597995 Metal gate device with low temperature oxygen scavenging
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US Patent 7425740 Method and structure for a 1T-RAM bit cell and macro
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US Patent 7663166 Wire-type semiconductor devices and methods of fabricating the same
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US Patent 8048723 Germanium FinFETs having dielectric punch-through stoppers
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US Patent 8053299 Method of fabrication of a FinFET element
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US Patent 8183627 Hybrid fin field-effect transistor structures and related methods
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US Patent 8766379 Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer
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US Patent 8776734 Remedial system: a pollution control device for utilizing and abating volatile organic compounds
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•••
Patent Inventor Names
I-Sheng Chen
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Yee-Chia Yeo
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Chih Chieh Yeh
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Cheng-Hsien Wu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11855151
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Patent Primary Examiner
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Dao H Nguyen
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CPC Code
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H01L 29/66795
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H01L 29/7853
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H01L 29/7856
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H01L 29/78696
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H01L 21/823807
0
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H01L 21/82385
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H01L 29/1054
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H01L 29/0673
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H01L 29/165
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H01L 29/42392
0
•••

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