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US Patent 11854906 Gate structures for semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 30, 2021
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Date of Patent
December 26, 2023
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Patent Application Number
17461487
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Patent Citations
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 10825736 Nanosheet with selective dipole diffusion into high-k
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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•••
Patent Inventor Names
Chun-Fai Cheng
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Kuan-Chung Chen
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Chang-Miao Liu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11854906
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Patent Primary Examiner
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Tong-Ho Kim
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CPC Code
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H01L 29/0665
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H01L 27/0924
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H01L 29/401
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H01L 29/42364
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H01L 29/78
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H01L 29/495
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H01L 21/823857
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H01L 21/02192
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H01L 21/02603
0
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H01L 21/28088
0
•••

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