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US Patent 11776602 Memory array staircase structure

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Contents

Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11776602
Patent Inventor Names
Sheng-Chen Wang
Meng-Han Lin
Han-Jong Chia
Feng-Cheng Yang
Chung-Te Lin
Yu-Ming Lin
Date of Patent
October 3, 2023
Patent Application Number
17814341
Date Filed
July 22, 2022
Patent Citations
‌
US Patent 9570464 Method for manufacturing semiconductor device
‌
US Patent 9620513 Semiconductor device and method of manufacturing the same
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US Patent 9620712 Concave word line and convex interlayer dielectric for protecting a read/write layer
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US Patent 9748257 Semiconductor devices having dummy patterns and methods of fabricating the same
‌
US Patent 9947721 Thermal insulation for three-dimensional memory arrays
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US Patent 9953992 Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof
‌
US Patent 10109639 Lateral non-volatile storage cell
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US Patent 10115681 Compact three-dimensional memory device having a seal ring and methods of manufacturing the same
...
Patent Primary Examiner
‌
Fernando Hidalgo
CPC Code
‌
H01L 27/11578
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H01L 27/11551
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H01L 27/1159
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H01L 21/8221
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H01L 29/6684
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H01L 29/78391
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G11C 8/14
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H01L 27/11597
Patent abstract

Routing arrangements for 3D memory arrays and methods of forming the same are disclosed. In an embodiment, a memory array includes a first word line extending from a first edge of the memory array in a first direction, the first word line having a length less than a length of a second edge of the memory array perpendicular to the first edge of the memory array; a second word line extending from a third edge of the memory array opposite the first edge of the memory array, the second word line extending in the first direction, the second word line having a length less than the length of the second edge of the memory array; a memory film contacting the first word line; and an OS layer contacting a first source line and a first bit line, the memory film being disposed between the OS layer and the first word line.

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