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US Patent 11769538 Decode circuitry coupled to a memory array

Patent 11769538 was granted and assigned to Micron Technology on September, 2023 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Micron Technology
Micron Technology
Date Filed
December 14, 2021
Date of Patent
September 26, 2023
Patent Applicant
Micron Technology
Micron Technology
Patent Application Number
17550668
Patent Citations
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US Patent 8841649 Three dimensional memory array architecture
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US Patent 8847186 Self-selecting PCM device not requiring a dedicated selector transistor
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US Patent 9117503 Memory array plane select and methods
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US Patent 9166158 Apparatuses including electrodes having a conductive barrier material and methods of forming same
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US Patent 9245926 Apparatuses and methods including memory access in cross point memory
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US Patent 9368205 Set and reset operation in phase change memory and associated techniques and configurations
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US Patent 9679650 3D NAND memory Z-decoder
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US Patent 9613689 Self-selecting local bit line for a three-dimensional memory array
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US Patent 7466584 Method and apparatus for driving an electronic load
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US Patent 8345472 Three-terminal ovonic threshold switch as a current driver in a phase change memory
•••
Patent Inventor Names
Timothy C. Langtry
Richard K. Dodge
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11769538
Patent Primary Examiner
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Sultana Begum
CPC Code
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G11C 13/0026
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G11C 13/0028
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G11C 13/003
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G11C 13/0023
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G11C 8/16
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G11C 5/025
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G11C 2213/71
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H01L 27/0688
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G11C 8/14
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G11C 8/10
•••

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