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US Patent 11715785 Semiconductor device and manufacturing method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
April 22, 2021
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Date of Patent
August 1, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17238029
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Patent Citations
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US Patent 7880228 Semiconductor device including MISFET
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US Patent 8278174 In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
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US Patent 10062781 MOS devices having epitaxy regions with reduced facets
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US Patent 10658510 Source/drain structure
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US Patent 7510925 Method of manufacturing semiconductor device, and semiconductor device
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US Patent 7791064 Semiconductor device and fabrication method thereof
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11715785
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Patent Primary Examiner
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Mary A Wilczewski
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CPC Code
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H01L 29/7848
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H01L 27/088
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H01L 27/0922
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H01L 21/02529
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H01L 21/02636
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H01L 21/02532
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H01L 21/02381
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H01L 29/165
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H01L 29/78
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H01L 21/02576
0
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