Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Nobuaki Yasutake0
Date of Patent
February 1, 2011
0Patent Application Number
127232510
Date Filed
March 12, 2010
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate electrode, a source/drain layer, and a germanide layer. The gate insulating film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating film. The source/drain layer is formed on both sides of the gate electrode, contains silicon germanium, and has a germanium layer in a surface layer portion. The germanide layer is formed on the germanium layer of the source/drain layer.
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