US Patent 11705517 Nanosheet transistors with strained channel regions

Patent

US Patent 9356025 Enhancing MOSFET performance with corner stresses of STI

US Patent 9711414 Strained stacked nanosheet FETS and/or quantum well stacked nanosheet

US Patent 10008583 Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same

US Patent 9728602 Variable channel strain of nanowire transistors to improve drive current

US Patent 10074575 Integrating and isolating nFET and pFET nanosheet transistors on a substrate

US Patent 8963250 Semiconductor device including a film for applying stress to a channel formation region to increase current flow

US Patent 9048300 Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies

United States Patent and Trademark Office

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