US Patent 11705517 Nanosheet transistors with strained channel regions
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US Patent 11705517 Nanosheet transistors with strained channel regions
Article
A method of fabricating a semiconductor device is described. The method includes forming a nanosheet stack on a substrate, the nanosheet stack includes nanosheet channel layers. A gate is formed around the nanosheet channel layers of the nanosheet stack. A strained material is formed along a sidewall surface of the gate. The strained material is configured to create strain in the nanosheet channel layers of the nanosheet stack.
Infobox
Is a
Patent Jurisdiction
Patent Number
117055170
Date of Patent
July 18, 2023
0Patent Application Number
171361850
Date Filed
December 29, 2020
0Patent Citations
Patent Primary Examiner
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