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US Patent 11677013 Source/drain epitaxial layers for transistors

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
October 16, 2020
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Date of Patent
June 13, 2023
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Patent Application Number
17072418
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Patent Citations
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9812363 FinFET device and method of forming same
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11677013
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Patent Primary Examiner
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Christine A Enad
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CPC Code
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H01L 29/045
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H01L 29/7851
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H01L 29/66795
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H01L 29/0847
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H01L 29/6681
0

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