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US Patent 11508665 Packages with thick RDLs and thin RDLs stacked alternatingly

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Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11508665
Date of Patent
November 22, 2022
Patent Application Number
16909517
Date Filed
June 23, 2020
Patent Citations
‌
US Patent 10784203 Semiconductor package and method
‌
US Patent 11011447 Semiconductor package and method for forming the same
‌
US Patent 10879199 Method of manufacturing semiconductor package
‌
US Patent 11057996 Circuit board, method of manufacturing circuit board, and electronic device
‌
US Patent 10340238 Wiring substrate and semiconductor device
‌
US Patent 10676351 Nano-electromechanical system (NEMS) device structure and method for forming the same
Patent Citations Received
‌
US Patent 12020983 Processes for reducing leakage and improving adhesion
0
Patent Primary Examiner
‌
Lawrence C Tynes, Jr.
CPC Code
‌
H01L 23/5383
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H01L 2224/02331
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H01L 23/5381
‌
H01L 2224/023
‌
H01L 2224/0233
‌
H01L 2224/16227
‌
H01L 21/4857
‌
H01L 23/5386

A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.

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