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US Patent 11444081 Integrated circuit (IC) device
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Is a
Patent
Date Filed
January 15, 2021
Date of Patent
September 13, 2022
Patent Application Number
17150712
Patent Citations
US Patent 10332985 Semiconductor device and manufacturing method thereof
US Patent 10229971 Integration of thick and thin nanosheet transistors on a single chip
US Patent 10566248 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
US Patent 10546942 Nanosheet transistor with optimized junction and cladding defectivity control
US Patent 10170638 Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
Patent Citations Received
US Patent 11791216 Nanostructure field-effect transistor device and method of forming
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11444081
Patent Primary Examiner
Nathan W Ha
CPC Code
H01L 29/0673
H01L 29/0847
H01L 29/66545
H01L 29/66795
H01L 29/7851
H01L 21/3086
H01L 21/823431
H01L 27/0886
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