Patent attributes
A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.
