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US Patent 10332985 Semiconductor device and manufacturing method thereof

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Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10332985
Date of Patent
June 25, 2019
Patent Application Number
15940423
Date Filed
March 29, 2018
Patent Citations Received
‌
US Patent 11444081 Integrated circuit (IC) device
‌
US Patent 10930649 Integrated circuit (IC) device
‌
US Patent 11594535 High performance nanosheet fabrication method with enhanced high mobility channel elements
Patent Primary Examiner
‌
Vu A Vu
Patent abstract

A method of manufacturing a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers on a substrate. The first and second semiconductor layers include first end portions on either side of a second portion along a length of the first and second semiconductor layers. The first and second semiconductor layers are formed of different materials. The second portion of the first semiconductor layers is removed to form spaces. A mask layer is formed over the second portion of an uppermost second semiconductor layer above the spaces. The first portions of first and second semiconductor layers are irradiated with radiation from a radiation source to cause material from the first portions of the first and second semiconductor layers to combine with each other.

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