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US Patent 11410937 Semiconductor device with aluminum nitride anti-deflection layer

Patent 11410937 was granted and assigned to Raytheon on August, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
1
Current Assignee
Raytheon
Raytheon
1
Date Filed
August 20, 2020
1
Date of Patent
August 9, 2022
1
Patent Applicant
Raytheon
Raytheon
1
Patent Application Number
16998235
1
Patent Citations
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US Patent 10515905 Semiconductor device with anti-deflection layers
Patent Citations Received
‌
US Patent 12002773 Hybrid pocket post and tailored via dielectric for 3D-integrated electrical device
4
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US Patent 11851785 Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device
5
‌
US Patent 11894477 Electrical device with stress buffer layer and stress compensation layer
6
Patent Inventor Names
Michael J. Rondon
1
George Grama
1
Andrew P. Clarke
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
11410937
1
Patent Primary Examiner
‌
Bo B Jang
1

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