Patent 11380669 was granted and assigned to Micron Technology on July, 2022 by the United States Patent and Trademark Office.
A method of forming a microelectronic device comprises forming a source material around substantially an entire periphery of a base material, and removing the source material from lateral sides of the base material while maintaining the source material over an upper surface and a lower surface of the base material. Related methods and base structures for microelectronic devices are also described.