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US Patent 11380669 Methods of forming microelectronic devices

Patent 11380669 was granted and assigned to Micron Technology on July, 2022 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Micron Technology

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Current Assignee

Micron Technology

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Kunal R. Parekh0

Date of Patent

July 5, 2022

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Patent Application Number

169057340

Date Filed

June 18, 2020

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Patent Citations

US Patent 10283703 Cross-point memory and methods for forming of the same

US Patent 10847220 Apparatuses and methods for bi-directional access of crosspoint arrays

US Patent 10665580 Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

US Patent 10381362 Three-dimensional memory device including inverted memory stack structures and methods of making the same

Patent Citations Received

US Patent 12089422 Microelectronic devices, and related methods and memory devices

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US Patent 12068272 Microelectronic devices having a memory array region, a control logic region, and signal routing structures

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US Patent 12080700 Microelectronic devices including control logic regions

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US Patent 11751408 Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Patent Primary Examiner

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CPC Code

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A method of forming a microelectronic device comprises forming a source material around substantially an entire periphery of a base material, and removing the source material from lateral sides of the base material while maintaining the source material over an upper surface and a lower surface of the base material. Related methods and base structures for microelectronic devices are also described.

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