Log in
Enquire now
‌

US Patent 11355167 Circuits and methods for in-memory computing

OverviewStructured DataIssuesContributors

Contents

TimelineTable: Further ResourcesReferences
Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11355167
Date of Patent
June 7, 2022
Patent Application Number
17356211
Date Filed
June 23, 2021
Patent Citations
‌
US Patent 10121533 Techniques for data retention in memory cells during power interruption
‌
US Patent 10636481 Memory cell for computing-in-memory applications, memory unit for computing-in-memory applications and computing method thereof
‌
US Patent 10012929 Imaging cartridge chip, imaging cartridge, and method for switching imaging cartridge chip serial number
Patent Citations Received
‌
US Patent 11657238 Low-power compute-in-memory bitcell
9
‌
US Patent 11783875 Circuits and methods for in-memory computing
‌
US Patent 11922131 Scalable, multi-precision, self-calibrated multiplier-accumulator architecture
10
‌
US Patent 12019702 Throughput and precision-programmable multiplier-accumulator architecture
11
Patent Primary Examiner
‌
Son L. Mai
CPC Code
‌
G11C 15/04
‌
G11C 15/043
‌
G06F 7/501
‌
G06F 7/5443
‌
G11C 7/1051
‌
G11C 7/1036
‌
G11C 7/1078
‌
G11C 16/3404

In some embodiments, an in-memory-computing SRAM macro based on capacitive-coupling computing (C3) (which is referred to herein as “C3SRAM”) is provided. In some embodiments, a C3SRAM macro can support array-level fully parallel computation, multi-bit outputs, and configurable multi-bit inputs. The macro can include circuits embedded in bitcells and peripherals to perform hardware acceleration for neural networks with binarized weights and activations in some embodiments. In some embodiments, the macro utilizes analog-mixed-signal capacitive-coupling computing to evaluate the main computations of binary neural networks, binary-multiply-and-accumulate operations. Without needing to access the stored weights by individual row, the macro can assert all of its rows simultaneously and form an analog voltage at the read bitline node through capacitive voltage division, in some embodiments. With one analog-to-digital converter (ADC) per column, the macro cab realize fully parallel vector-matrix multiplication in a single cycle in accordance with some embodiments.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 11355167 Circuits and methods for in-memory computing

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us
By using this site, you agree to our Terms of Service.