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US Patent 11302794 FinFET with dual work function metal
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Is a
Patent
Date Filed
March 17, 2020
Date of Patent
April 12, 2022
Patent Application Number
16821903
Patent Citations
US Patent 10249533 Method and structure for forming a replacement contact
0
US Patent 10381273 Vertically stacked multi-channel transistor structure
US Patent 10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates
0
Patent Inventor Names
Pouya Hashemi
0
Takashi Ando
0
Ruilong Xie
0
Alexander Reznicek
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11302794
Patent Primary Examiner
Douglas W Owens
CPC Code
H01L 29/7851
H01L 29/66545
H01L 21/28088
H01L 29/4983
H01L 29/4966
H01L 29/66795
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