US Patent 10249533 Method and structure for forming a replacement contact

A method for manufacturing a semiconductor device includes forming a plurality of gate structures spaced apart from each other on a fin, forming an inorganic plug portion on the fin between at least two gate structures of the plurality of gate structures, forming a dielectric layer on the fin and between remaining gate structures of the plurality of gate structures, forming an organic planarizing layer (OPL) on the plurality of gate structures and on the inorganic plug portion, removing a portion of the OPL to expose the inorganic plug portion, selectively removing the inorganic plug portion, and forming a contact on the fin in place of the removed inorganic plug portion.