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US Patent 11257674 Eliminating yield impact of stochastics in lithography

Patent 11257674 was granted and assigned to Lam Research on February, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Lam Research
Lam Research
Date Filed
August 31, 2020
Date of Patent
February 22, 2022
Patent Applicant
Lam Research
Lam Research
Patent Application Number
17008095
Patent Citations
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US Patent 10580585 Two-step deposition process
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US Patent 10685836 Etching substrates using ALE and selective deposition
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US Patent 10796912 Eliminating yield impact of stochastics in lithography
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US Patent 10832909 Atomic layer etch, reactive precursors and energetic sources for patterning applications
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US Patent 10831096 Vacuum-integrated hardmask processes and apparatus
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US Patent 10269566 Etching substrates using ale and selective deposition
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US Patent 10494715 Atomic layer clean for removal of photoresist patterning scum
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US Patent 10514598 Vacuum-integrated hardmask processes and apparatus
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US Patent 10566212 Designer atomic layer etching
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US Patent 10566213 Atomic layer etching of tantalum
Patent Citations Received
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US Patent 12125711 Reducing roughness of extreme ultraviolet lithography resists
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US Patent 11988965 Underlayer for photoresist adhesion and dose reduction
0
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US Patent 12062538 Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
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US Patent 12105422 Photoresist development with halide chemistries
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US Patent 11921427 Methods for making hard masks useful in next-generation lithography
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11257674
Patent Primary Examiner
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S M Sohel Imtiaz

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