US Patent 11145516 Substrate processing method and substrate processing apparatus

A substrate processing method processes a substrate having a surface in which a plurality of recessed parts is formed. The substrate processing method includes a processing target layer removing process of etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface thereof is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate.