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US Patent 10971528 Semiconductor device

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Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
109715280
Patent Inventor Names
Yusuke Shino0
Hiroaki Honda0
Kosei Nei0
Tsutomu Murakawa0
Hajime Kimura0
Date of Patent
April 6, 2021
0
Patent Application Number
168164230
Date Filed
March 12, 2020
0
Patent Citations
‌
US Patent 10147681 Semiconductor device and manufacturing method thereof
Patent Primary Examiner
‌
Telly D Green
0
Patent abstract

A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

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