Patent attributes
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator over the first conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the first conductor, and a side surface of the third insulator; a fifth insulator in contact with a top surface of the oxide and a side surface of the fourth insulator; and a second conductor in contact with the top surface of the oxide and the fifth insulator. The level of the top surface of the fourth insulator is higher than the level of the top surface of the fifth insulator.
