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US Patent 10882740 Wafer-level package with enhanced performance and manufacturing method thereof

Patent 10882740 was granted and assigned to Qorvo on January, 2021 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Qorvo
Qorvo
Current Assignee
Qorvo
Qorvo
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10882740
Date of Patent
January 5, 2021
Patent Application Number
16703251
Date Filed
December 4, 2019
Patent Citations
‌
US Patent 10134837 Porous silicon post processing
Patent Citations Received
‌
US Patent 12129168 Microelectronics package with vertically stacked MEMS device and controller device
0
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US Patent 11495520 RF devices with enhanced performance and methods of forming the same
‌
US Patent 11495575 RF devices with enhanced performance and methods of forming the same
‌
US Patent 11532597 RF devices with enhanced performance and methods of forming the same
‌
US Patent 11551998 RF devices with enhanced performance and methods of forming the same
‌
US Patent 11552036 RF devices with enhanced performance and methods of forming the same
‌
US Patent 11552003 RF devices with enhanced performance and methods of forming the same
‌
US Patent 12125739 RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
0
...
Patent Primary Examiner
‌
Bo B Jang
Patent abstract

The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

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