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US Patent 10134837 Porous silicon post processing

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Contents

Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10134837
Patent Inventor Names
Richard Hammond0
Stephen Alan Fanelli0
Date of Patent
November 20, 2018
Patent Application Number
15638874
Date Filed
June 30, 2017
Patent Citations Received
‌
US Patent 11495575 RF devices with enhanced performance and methods of forming the same
0
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US Patent 12129168 Microelectronics package with vertically stacked MEMS device and controller device
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US Patent 11476177 Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
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US Patent 11476221 RF devices with enhanced performance and methods of forming the same
0
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US Patent 11495520 RF devices with enhanced performance and methods of forming the same
0
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US Patent 12080683 RF devices with enhanced performance and methods of forming the same
0
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US Patent 12112999 RF devices with enhanced performance and methods of forming the same
0
‌
US Patent 12125739 RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
0
...
Patent Primary Examiner
‌
Jarrett J Stark
Patent abstract

A semiconductor on insulator (SOI) device may include a semiconductor handle substrate. The semiconductor hand may include a porous semiconductor layer, and an etch stop layer proximate the porous semiconductor layer. The SOI may also include an insulator layer on the etch stop layer. The SOI may further include a device semiconductor layer on the insulator layer.

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