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US Patent 10685836 Etching substrates using ALE and selective deposition

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Current Assignee
Lam Research
Lam Research
0
Date Filed
March 21, 2019
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Date of Patent
June 16, 2020
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
16361083
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Patent Citations
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US Patent 10269566 Etching substrates using ale and selective deposition
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US Patent 10056268 Limiting electronic package warpage
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US Patent 10096487 Atomic layer etching of tungsten and other metals
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US Patent 10304659 Ale smoothness: in and outside semiconductor industry
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Patent Citations Received
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US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
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US Patent 10796912 Eliminating yield impact of stochastics in lithography
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US Patent 10832909 Atomic layer etch, reactive precursors and energetic sources for patterning applications
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US Patent 11257674 Eliminating yield impact of stochastics in lithography
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US Patent 10727073 Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10685836
0
Patent Primary Examiner
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Shamim Ahmed
0

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