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US Patent 10572697 Method of etch model calibration using optical scatterometry

Patent 10572697 was granted and assigned to Lam Research on February, 2020 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Lam Research
Lam Research
Date Filed
April 6, 2018
Date of Patent
February 25, 2020
Patent Applicant
Lam Research
Lam Research
Patent Application Number
15946940
Patent Citations
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US Patent 10303830 Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
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US Patent 10032681 Etch metric sensitivity for endpoint detection
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US Patent 10197908 Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
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US Patent 10254641 Layout pattern proximity correction through fast edge placement error prediction
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US Patent 10386828 Methods and apparatuses for etch profile matching by surface kinetic model optimization
Patent Citations Received
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US Patent 11704463 Method of etch model calibration using optical scatterometry
0
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US Patent 11341305 Method of predicting shape of semiconductor device
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US Patent 11921433 Optical metrology in machine learning to characterize features
0
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US Patent 10977405 Fill process optimization using feature scale modeling
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US Patent 10997345 Method of etch model calibration using optical scatterometry
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US Patent 11624981 Resist and etch modeling
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10572697
Patent Primary Examiner
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Bryce M Aisaka

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