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US Patent 10504742 Method of atomic layer etching using hydrogen plasma

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 23, 2018
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Date of Patent
December 10, 2019
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Patent Application Number
15987755
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Patent Citations
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US Patent 10032792 Semiconductor device and manufacturing method thereof
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US Patent 10043661 Method for protecting layer by forming hydrocarbon-based extremely thin film
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US Patent 10053774 Reactor system for sublimation of pre-clean byproducts and method thereof
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US Patent 10083836 Formation of boron-doped titanium metal films with high work function
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US Patent 10087522 Deposition of metal borides
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US Patent 10087525 Variable gap hard stop design
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US Patent 10090316 3D stacked multilayer semiconductor memory using doped select transistor channel
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US Patent 10134757 Method of processing a substrate and a device manufactured by using the method
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US Patent 10103040 Apparatus and method for manufacturing a semiconductor device
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US Patent 10167557 Gas distribution system, reactor including the system, and methods of using the same
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Patent Citations Received
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US Patent 11942306 Atomic layer etching by electron wavefront
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US Patent 11664195 DC plasma control for electron enhanced material processing
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US Patent 11676797 DC plasma control for electron enhanced material processing
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US Patent 11688588 Electron bias control signals for electron enhanced material processing
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US Patent 11715623 DC plasma control for electron enhanced material processing
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US Patent 11869747 Atomic layer etching by electron wavefront
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US Patent 11887823 Electron bias control signals for electron enhanced material processing
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Patent Inventor Names
Akiko Kobayashi
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Masaru Hori
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Masaru Zaitsu
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Nobuyoshi Kobayashi
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Takayoshi Tsutsumi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10504742
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Patent Primary Examiner
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Lan Vinh
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