US Patent 10475637 Semiconductor substrate and manufacturing method thereof
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Patent abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
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Patent Inventor Names
Chih-Yuan Chuang0
Chun-I Fan0
Wen-Ching Hsu0
Ying-Ru Shih0
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Patent Jurisdiction
Patent Number
104756370
Date of Patent
November 12, 2019
0Patent Application Number
155862910
Date Filed
May 4, 2017
0Patent Citations Received
Patent Primary Examiner
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Patent Citations Received
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US Patent 10475637 Semiconductor substrate and manufacturing method thereof
Infobox
Is a
Patent jurisdiction
Patent number
10475637
Date of patent
November 12, 2019
Patent application number
15586291
Date Filed
May 4, 2017
Patent primary examiner
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