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US Patent 10475637 Semiconductor substrate and manufacturing method thereof

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Chih-Yuan Chuang0

Chun-I Fan0

Wen-Ching Hsu0

Ying-Ru Shih0

Date of Patent

November 12, 2019

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Patent Application Number

155862910

Date Filed

May 4, 2017

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Patent Citations Received

US Patent 11515408 Rough buffer layer for group III-V devices on silicon

Patent Primary Examiner

0

Patent abstract

A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.

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