US Patent 10446675 Noff III-nitride high electron mobility transistor
Patent 10446675 was granted and assigned to X-Fab on October, 2019 by the United States Patent and Trademark Office.
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Patent abstract
A High Electron Mobility Transistor comprising a source and a drain, a III-N buffer layer and a III-N barrier layer jointly forming a 2DEG in the buffer layer between the source and the drain, a first gate electrode configured to receive a gate bias voltage and a second gate electrode located between the drain and the first gate and conductively connected to the source via the 2DEG.
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Patent Inventor Names
Victor Sizov0
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
104466750
Date of Patent
October 15, 2019
0Patent Application Number
161086030
Date Filed
August 22, 2018
0Patent Primary Examiner
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US Patent 10446675 Noff III-nitride high electron mobility transistor
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10446675
Date of patent
October 15, 2019
Patent application number
16108603
Date Filed
August 22, 2018
Patent primary examiner
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