Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Victor Sizov0
Date of Patent
October 15, 2019
0Patent Application Number
161086030
Date Filed
August 22, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A High Electron Mobility Transistor comprising a source and a drain, a III-N buffer layer and a III-N barrier layer jointly forming a 2DEG in the buffer layer between the source and the drain, a first gate electrode configured to receive a gate bias voltage and a second gate electrode located between the drain and the first gate and conductively connected to the source via the 2DEG.
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