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US Patent 10438797 Method of quasi atomic layer etching

Patent 10438797 was granted and assigned to Tokyo Electron on October, 2019 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee
Tokyo Electron
Tokyo Electron
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10438797
Date of Patent
October 8, 2019
Patent Application Number
15697168
Date Filed
September 6, 2017
Patent Citations Received
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US Patent 11508554 High voltage filter assembly
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US Patent 12111341 In-situ electric field detection method and apparatus
5
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US Patent 11462389 Pulsed-voltage hardware assembly for use in a plasma processing system
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US Patent 11476090 Voltage pulse time-domain multiplexing
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US Patent 11476145 Automatic ESC bias compensation when using pulsed DC bias
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US Patent 11495470 Method of enhancing etching selectivity using a pulsed plasma
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
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Patent Primary Examiner
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Lan Vinh
Patent abstract

Techniques herein include an etch process that etches a layer of material incrementally, similar to mono-layer etching of atomic layer etching (ALE), but not necessarily including self-limiting, mono-layer action of ALE. Such techniques can be considered as quasi-atomic layer etching (Q-ALE). Techniques herein are beneficial to precision etching applications such as during soft-mask open. Techniques herein enable precise transfer of a given mask pattern into an underlying layer. By carefully controlling the polymer deposition relative to polymer assisted etching through its temporal cycle, a very thin layer of conformal polymer can be activated and used to precisely etch and transfer the desired patterns.

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