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US Patent 10424639 Nanosheet transistor with high-mobility channel

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
April 19, 2018
Date of Patent
September 24, 2019
Patent Application Number
15957317
Patent Citations Received
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US Patent 11368016 ESD protection for integrated circuit devices
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US Patent 10818792 Nanosheet field-effect transistors formed with sacrificial spacers
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US Patent 11664656 ESD protection for integrated circuit devices
0
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US Patent 11688626 Nanosheet transistor with self-aligned dielectric pillar
0
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US Patent 11462614 Semiconductor devices and methods of manufacturing
Patent Inventor Names
Kangguo Cheng
0
Xin Miao
0
Chen Zhang
0
Wenyu Xu
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10424639
Patent Primary Examiner
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Calvin Y Choi

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