US Patent 10424639 Nanosheet transistor with high-mobility channel

A method of fabricating a semiconductor device includes forming a gate on a nanosheet stack including a first nanosheet and a second nanosheet. The first nanosheet and the second nanosheet each include a dielectric material. The method includes removing a portion of the nanosheet stack in a source/drain region adjacent to the gate to form a trench and depositing a first semiconductor material in the trench. The method further includes removing the second nanosheet from the nanosheet stack to form a channel region gap in the nanosheet stack and depositing a second semiconductor material in the channel region gap to form a channel.