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US Patent 10319626 Interconnects with cuts formed by block patterning

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
103196261
Patent Inventor Names
Rui Chen1
Minghao Tang1
Yuping Ren1
Date of Patent
June 11, 2019
1
Patent Application Number
158341511
Date Filed
December 7, 2017
1
Patent Citations Received
‌
US Patent 11264271 Semiconductor fabrication method for producing nano-scaled electrically conductive lines
‌
US Patent 10777413 Interconnects with non-mandrel cuts formed by early block patterning
Patent Primary Examiner
‌
Lan Vinh
1
Patent abstract

Methods of fabricating an interconnect structure. A first sacrificial layer is deposited over a dielectric layer, and a block mask is formed that covers an area on the first sacrificial layer. A second sacrificial layer is deposited over the block mask and the first sacrificial layer. After the block mask is formed, the second sacrificial layer is patterned to form a mandrel that is arranged in part on a portion of the block mask.

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