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US Patent 10319626 Interconnects with cuts formed by block patterning

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
0
Date Filed
December 7, 2017
0
Date of Patent
June 11, 2019
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Patent Application Number
15834151
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Patent Citations Received
‌
US Patent 11264271 Semiconductor fabrication method for producing nano-scaled electrically conductive lines
‌
US Patent 10777413 Interconnects with non-mandrel cuts formed by early block patterning
Patent Inventor Names
Rui Chen
0
Minghao Tang
0
Yuping Ren
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
10319626
0
Patent Primary Examiner
‌
Lan Vinh
0

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