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US Patent 10283356 Semiconductor wafer comprising a monocrystalline group-IIIA nitride layer

Patent 10283356 was granted and assigned to Siltronic on May, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to have a surface comprising closely spaced tips extending from the surface, depositing a group-IIIB silicide layer on the tips, then depositing a group-IIIB nitride layer, and then depositing a group-IIIA nitride.

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