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US Patent 10249609 Apparatuses for communication systems transceiver interfaces

Patent 10249609 was granted and assigned to Analog Devices on April, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Analog Devices
Analog Devices
Current Assignee
Analog Devices
Analog Devices
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10249609
Date of Patent
April 2, 2019
Patent Application Number
15674218
Date Filed
August 10, 2017
Patent Citations
‌
US Patent 10008490 High speed interface protection apparatus
Patent Citations Received
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US Patent 11942473 Electrostatic discharge protection for high speed transceiver interface
0
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US Patent 11469717 Microwave amplifiers tolerant to electrical overstress
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US Patent 11362203 Electrical overstress protection for electronic systems subject to electromagnetic compatibility fault conditions
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US Patent 11387648 Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
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US Patent 11462535 Distributed electrical overstress protection for large density and high data rate communication applications
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US Patent 10374092 Power amplifier ramping and power control with forward and reverse back-gate bias
‌
US Patent 10361187 Electrostatic discharge protection device
‌
US Patent 10581423 Fault tolerant low leakage switch
...
Patent Primary Examiner
‌
David S. Blum
Patent abstract

An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a first bipolar junction transistor (BJT) and a second BJT cross-coupled with the first BJT to operate as a first semiconductor-controlled rectifier (SCR), where a base of the first BJT is connected to a collector of the second BJT, and a base of the second BJT is connected to an emitter or a collector of the first BJT. The integrated circuit device additionally includes a triggering device comprising a first diode having a cathode electrically connected to the base of the first BJT. The integrated circuit device further includes a third BJT cross-coupled with the second BJT to operate as a second SCR, where the third BJT has a collector connected to the base of the second BJT and a base connected to the collector of the second BJT.

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