US Patent 10128085 Method of plasma etching
Patent 10128085 was granted and assigned to Tokyo Electron on November, 2018 by the United States Patent and Trademark Office.
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Patent abstract
A method of plasma etching includes an etching process that generates plasma from a process gas that includes fluorocarbon by using first high frequency power output by a first high frequency power source, and by the generated plasma, etches a low-k film with a metal-containing film as a mask. In the etching process, the first high frequency power is intermittently applied.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
101280850
Date of Patent
November 13, 2018
0Patent Application Number
153468860
Date Filed
November 9, 2016
0Patent Citations Received
Patent Primary Examiner
Edits on 22 Sep, 2022
Golden AI
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
101280850
Date of Patent
November 13, 2018
0Patent Application Number
153468860
Date Filed
November 9, 2016
0Patent Citations Received
Patent Primary Examiner
Edits on 6 Jul, 2022
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Patent citations received
Edits on 23 Jan, 2022
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US Patent 10128085 Method of plasma etching
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10128085
Date of patent
November 13, 2018
Patent application number
15346886
Date Filed
November 9, 2016
Patent primary examiner
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