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US Patent 10063062 Method of detecting plasma discharge in a plasma processing system

Patent 10063062 was granted and assigned to Tokyo Electron on August, 2018 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee
Tokyo Electron
Tokyo Electron
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10063062
Date of Patent
August 28, 2018
Patent Application Number
14944904
Date Filed
November 18, 2015
Patent Citations Received
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US Patent 11508554 High voltage filter assembly
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US Patent 12125673 Pulsed voltage source for plasma processing applications
0
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US Patent 11462389 Pulsed-voltage hardware assembly for use in a plasma processing system
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US Patent 11476090 Voltage pulse time-domain multiplexing
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US Patent 11476145 Automatic ESC bias compensation when using pulsed DC bias
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US Patent 11495470 Method of enhancing etching selectivity using a pulsed plasma
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
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US Patent 12111341 In-situ electric field detection method and apparatus
0
...
Patent Primary Examiner
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Hai L Nguyen
Patent abstract

Detecting presence or absence of plasma is accomplished from probe signals. In one embodiment, a low-power modulated signal is applied to an electrostatic chuck from a bias power generator. A corresponding system then monitors peak-to-peak voltage (Vpp) signal responses or radio frequency current responses. The probe signal can be generated to have insufficient power to either ignite or sustain plasma discharge (or cause component damage). Thus, low-duty and/or low current pulsing signals to be used. Presence or absence of the bulk plasma will then result in different Vpp or radio frequency current values.

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