US Patent 10002979 Unipolar doping in photodiode and phototransistor
Patent 10002979 was granted and assigned to Wavefront on June, 2018 by the United States Patent and Trademark Office.
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Patent abstract
Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.
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Patent Inventor Names
Jie Yao0
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Patent Citations Received
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Patent Citations Received
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
100029790
Date of Patent
June 19, 2018
0Patent Application Number
156086850
Date Filed
May 30, 2017
0Patent Primary Examiner
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US Patent 10002979 Unipolar doping in photodiode and phototransistor
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10002979
Date of patent
June 19, 2018
Patent application number
15608685
Date Filed
May 30, 2017
Patent primary examiner
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