Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jie Yao0
Date of Patent
June 19, 2018
0Patent Application Number
156086850
Date Filed
May 30, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.
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