GENESIC SEMICONDUCTOR INC. SBIR Phase II Award, October 2020

GeneSiC Semiconductor is developing > 20 kV, > 1kA stackable 4H-SiC based DRSDs in this SBIR program for next-generation US NAVY applications featuring: • Single-Chip ratings of = 2 kV and = 100 A • Round, positive bevel-terminated devices with solderable topside and backside metallization • Switching Times < 1 ns enabled by careful epi and device design • Special techniques to increase carrier lifetime in p-base layers leading to higher pumping durations and higher voltage compression ratios. • =1 MHz repetition rates due to lower energy losses in SiC combined with SiC’s higher thermal dissipation capability GeneSiC will be solely responsible for all tasks related to the proposed program.