SBIR/STTR Award attributes
Digital electronics provides sophisticated control of our manufacturing processes providing excellent energy efficiency. However the vast majority of our manufacturing processes operate in an analog world and the effectiveness of the control systems depends on the accuracy of the inputs to the digital control system and its analog outputs that implement that control. Recently developed atomically precise fabrication techniques can provide unprecedented control of the physical fabrication of analog Bipolar Junction Transistors (BJTs) with: extremely accurate operation, high gain-bandwidth performance, and very low noise. Additionally these devices will be extremely RAD HARD and will operate at cryogenic temperatures. These devices combined with the available digital control systems will provide significant energy savings for Government and commercialuses. We now have the technology to create these devices using the Scanning Tunneling Microscope (STM) patterning technology known as Hydrogen Depassivation Lithography (HDL). It provides a means to placing dopant atoms in a single (100) atomic plane. Precursor molecules for acceptor and donor dopants in separately patterned areas on the Si surface and can be covered up with epitaxial Si. The overall objective in phase I is to explore through experiments and modelling the most fundamental bipolar device, a PN junction. This knowledge will provide insight of how to develop the remarkable transistors in Phases II and III. In Phase I of this program we will: Select a precursor molecule for acceptors to complement PH3 which will be used to place donors. Develop a process to co-deposit both acceptors and donors in separate atomically precise patterns. Develop semiclassical models to better understand Atomically Precise 2D PN junctions. Make and measure these PN junctions and predict performance of 2D BJTs to be built in Phase II. Assuming that some of the performance advantages that we predict for these Atomically Precise 2D BJTs will be developed in Phase II and III, we will match device capabilities to specific high-value applications such as ultra-high performance discrete devices and small circuits. We will need to start with niche markets that can be penetrated with low volume production. These would include markets such as amplifiers for interfacing with quantum computers that operate at cryogenic temperatures, and electronic warfare applications where high gain-bandwidth and low noise operation are at a premium.If these niche markets are successful, and other applications based on atomically precise patterns of 2D dopants help fund further developments in fabrication tools, we can expect to develop moreapplications that are much larger markets such as inputs for sensors and ADCs to provide inputs to industrial controllers.We fully expect that there will be a drive toward solid state quantumapplications that will fund the development of manufacturing tools that will enable us to reach these larger markets.
